PPD CMOS image sensors are widely applied in space-related fields such as star trackers, remote sensing imaging, and Earth observation. However, due to the complex space environment beyond Earth"s atmosphere, these sensors in space equipment are subject to various radiation effects, including displacement effects, total dose effects, and single-event effects (SEEs), which can lead to degradation in imaging performance and, in severe cases, device malfunction. Current research on the single-event effects of PPD CMOS image sensors primarily relies on radiation experiments, with limited simulation studies. This work focuses on CMOS image sensors with PPD pixel structures, integrating heavy ion models to conduct TCAD modeling of the device physics model and single-event radiation damage effects of PPD CMOS image sensor pixel cells. We established an architectural model of the CMOS image sensor pixel cells and a heavy ion irradiation model, using heavy ions with different Linear Energy Transfer (LET) values to irradiate different sensitive areas of the pixel cells. We simulated the single-event transient effects (SETs) induced by heavy ions with various LETs on different regions of the pixel cells, considering the performance of PPD CMOS image sensors at different timing nodes, including reset, charge transfer, and storage. Heavy ions along their trajectory produce a large number of electron-hole pairs, forming a funnel region and an electric field region. The funnel region expands the charge collection range, while the electric field extends towards the substrate. Under the combined action of the electric field in the PN junction and the external electric field, electrons and holes drift rapidly. In the normal operation of the image sensor, key output moments include before and after the photodiode reset, before the Transfer Gate (TG) is activated, and during the Floating Diffusion (FD) reset. For these different moments, we compared the distribution of electron density and electrostatic potential in the pixel cell area before and after irradiation and analyzed the curves that change with the moment and position of incidence. Simulation results show that, compared to other nodes such as reset and charge collection, the transient change in electron density is most significant and the sensitivity to single-event radiation is highest when the transfer gate is open and charges are transferred from the PPD region to the FD region. Additionally, the PPD region exhibits stronger sensitivity to single-event radiation compared to other areas within the pixel cell, and the depletion region in the PPD region expands with increasing LET. Moreover, single-event radiation does not destroy the PPD structure but affects the absorption of photo-generated electrons by the PPD. After the PPD is reset, the pixel can still function normally and is not affected by single-event radiation from the previous cycle. The simulation results of this work provide important theoretical insights into the mechanisms of single-event radiation damage effects in PPD CMOS image sensors.