The wiring of high-speed optoelectronic three-dimensional(3D)integrated systems features a high density，small size，and complex structure. Accurate characterization of vertical through-silicon via(TSV)structures in high-speed optoelectronic 3D integration can significantly improve system reliability while reducing development time and tape-out costs. In this study，a high-speed coaxial TSV structure with various parameters was simulated. Next，based on the geometrical and process parameters determined from the simulation， a proper high-speed coaxial TSV test structure based on the L-2L de-embedding method was designed and fabricated on an eight-inch process platform. Finally，the transmission characteristics of the high-speed TSV were obtained through de-embedding. A comparison between the test and simulation results reveals an average error of 0. 938% between them within 40 GHz. This result confirms the high accuracy of the simulation method，corroborating the feasibility of its application to high-speed TSV development and high-speed optoelectronic 3D integrated system design.