(南京大学 电子科学与工程学院 江苏省光电信息功能材料重点实验室, 南京 210023)
(Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology,School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, CHN)
Junction temperature and carrier temperature are widely concerned as significant parameters affecting LED luminous efficiency. The variation rules of electroluminescence (EL) spectrum and carrier temperature with junction temperature of GaN-based blue micro-LED were investigated in this paper. The accurate real-time measurement of junction temperature and EL spectrum of GaN-based blue micro-LED at current densities of 0.04~53.4A/cm2 were conducted by using the chip design with a built-in integrated sensor unit, and the range of the low-temperature end of the junction temperature measurement was extended to 123K using the forward voltage method. The results show that the linear slope of junction temperature and forward voltage change due to carrier leakage and series resistance at low temperature. The high-energy slope method was used for EL spectrum to calculate the carrier temperature at different current densities. It is found that the carrier temperature and junction temperature can be approximately fitted by a quadratic equation within the range of junction temperature and current density under study. And the law of the variation of the carrier temperature with junction temperature and current density was analyzed and explained.
李会,贾先韬,周玉刚,张荣,郑有炓. GaN基蓝光micro-LED的结温和载流子温度研究[J].半导体光电,2023,44(4):498-503. LI Hui, JIA Xiantao, ZHOU Yugang, ZHANG Rong, ZHENG Youdou. Investigation of the Junction Temperature and Carrier Temperature of GaN-Based Blue Micro-LED[J].,2023,44(4):498-503.复制