Laser Annealing is an important process of eliminating the backside well of the backside-illuminated charge-coupled devices (CCD) image sensors. The influences of different laser wavelengths, energy densities, overlap rate of laser spots on doping activation rate, surface morphology, imaging quality and ultraviolet (UV) quantum ef?ciency of CCD were investigated. The results shown that, the doping activation rate of 355 nm laser is higher than that of 532 nm laser at shallow junction implantation. However, the presence of wafer crack is more easier appeared at low energy density when using 355 nm laser. On condition of laser annealing at energy density of 2J/cm_², 50%~65% cross rate using 355 nm laser, the boron doping is efficiently activated, and uniform imaging of backside-illuminated CCD is achieved. The UV quantum ef?ciency of CCD is significantly improved. The results indicated that the laser annealing process was effective, and met the requirement of backside-illuminated CCD.