自加热非晶锗热电阻MEMS流速传感器的制造与测试
DOI:
作者:
作者单位:

上海交通大学

作者简介:

通讯作者:

中图分类号:

基金项目:

航天科学技术基金


Fabrication and Testing of MEMS Velocity Sensor Based on Self heating Amorphous Germanium Thermistors
Author:
Affiliation:

Fund Project:

Space Science and Technology Fund

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    为扩大流速传感器的测量范围并降低功耗,制造并测试了一种基于自加热非晶锗薄膜热电阻的MEMS流速传感器,它是由嵌入氮化硅薄膜的四个非晶锗热敏电阻和一对环境测温补偿电阻组成。四个非晶锗热电阻同时作为自加热热源和测温元件,相互连接以形成惠斯通电桥。给出了MEMS工艺流程,微加工制造了尺寸为8.9 mm×5.6 mm ×0.4 mm的流速传感器芯片。搭建了低流速和高流速气流通道实验装置,对传感器的惠斯通电桥施加50μA的恒定电流(CCA),实现了0~50 m/s的流速测量。结果表明,传感器在0-2 m/s低流速时的灵敏度约为81.6 mV/(m/s),在2-50 m/s高流速时的灵敏度约为51.9 mV/(m/s),最大功耗仅约为1.03 mW。

    Abstract:

    In order to expand the measuring range of flow sensor and reduce power consumption of the sensor, a MEMS flow sensor based on self heating amorphous germanium film thermistors was fabricated and tested. It is composed of four amorphous germanium film thermistors and a pair of environmental temperature measurement compensation thermistors, which are embedded in a silicon nitride film. The four amorphous germanium thermistors act as self heating heat sources and temperature measuring elements at the same time, and are connected with each other to form a Wheatstone bridge. The MEMS fabrication process is given, and the size of 8.9 mm × 5.6 mm × 0.4 mm of the flow sensor chip is fabricated by micromachining. The low velocity and high velocity airflow pipeline experimental devices were built. With constant current (CCA) of 50 μA supplied to the Wheatstone bridge of the flow sensor, the flow velocity measurement of 0~50 m/s is realized by test. The results show that the sensitivity of the sensor is about 81.6 mV/(m/s) when measuring 0-2 m/s low flow velocity, 51.9 mV/(m/s) when measuring 2-50 m/s high flow velocity, and the maximum power consumption is only about 1.03 mW.

    参考文献
    相似文献
    引证文献
引用本文
分享
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2023-01-02
  • 最后修改日期:2023-01-02
  • 录用日期:2023-01-19
  • 在线发布日期:
  • 出版日期:

漂浮通知

①《半导体光电》新近入编《中文核心期刊要目总览》2023年版(即第10版),这是本刊自1992年以来连续第10次被《中文核心期刊要目总览》收录。
②目前,《半导体光电》已入编四个最新版高质量科技期刊分级目录,它们分别是中国电子学会《电子技术、通信技术领域高质量科技期刊分级目录》(T3)、中国图象图形学学会《图像图形领域高质量科技期刊分级目录》(T3)、中国电工技术学会《电气工程领域高质量科技期刊分级目录》(T3)和中国照明学会《照明领域高质量科技期刊分级目录》(T2)。
③关于用户登录弱密码必须强制调整的说明
④《半导体光电》微信公众号“半导体光电期刊”已开通,欢迎关注