多分辨率高速线列CMOS图像传感器设计
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中国科学院上海技术物理研究所 中国科学院红外成像材料与器件重点实验室

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TN212

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科技部重点研发资助项目


Design of a multiple resolution and high speed linear CMOS image sensor
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Key Lab of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physicsof The Chinese Academy of Sciences

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    摘要:

    设计并验证了一款可选分辨率、高速1024线列CMOS图像传感器。为了优化列总线读出速率,芯片采用总线分割技术减小总线寄生电容,有效提升了信号读出速率。传感器具有4种可选择分辨率功能,使其具有更高的帧频。设计的芯片采用0.5μm 标准CMOS工艺成功流片,验证了设计的正确性。测试结果表明:满阱容量4.76Me-/像素,动态范围75dB;128分辨率下,帧频能达到36000frames/sec。

    Abstract:

    A 1024 linear CMOS Image Sensor(CIS)with programmable resolution and high speed was presented and verified. In order to optimize the column bus readout rate, this sensor adopted column bus segmentation technology, which effectively reduced the parasitic capacitance on the bus and increased the signal readout rate. The sensor features 4 kind of programmable resolution for higher frame rate. In this paper, the chip was successfully manufactured by CSMC 0.5μm CMOS process, and the photoelectric response of the device was tested and evaluated. The results showed that the sensor’s full well charge was 4.76Me-/pixel, and dynamic range was 75dB. At 128 resolution, frame rate reached 36000 frames/sec.

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  • 收稿日期:2022-11-30
  • 最后修改日期:2022-11-30
  • 录用日期:2022-12-26
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