A photoelectronic reversible logic gate applied in neuromorphic photonics and quantum computation was constructed with a hybrid nano-thin film lithium niobate and silicon nitride waveguide. The main structure of the photoelectronic reversible logic gate is composed of two cascaded Mach-Zehnder modulators. The total length of the gate is only 4.4mm, only one hundredth of the length of a common proton exchange lithium niobate modulator. At the wavelength of 1.55μm, the Mark-Zehnder modulator achieves a complete power exchange with only 4.9V voltage that is well compatible with CMOS processing. The device characteristics show that the optoelectronic reversible logic gate can realize reversible logic operation. Moreover, in the wavelength range of 1.4μm to 1.6μm, the mean insertion loss of the device is 0.6dB, the minimum cross-talk of the output port is -47dB, and the maximum extinction ratio is 41dB. In the voltage range of 4V to 6V, the mean insertion loss is 0.63dB, the minimum cross-talk of the output port is -26dB, and the maximum extinction ratio is 22dB. Those performances guarantee the effectiveness of the optoelectronic reversible logic gate.