With the rapid development of the space technology, operational amplifier is widely used as the basic linear circuit in a satellite system. The earth’s natural space radiation environment consists of electrons, protons, and heavy ions, which can have serious effects on the surface properties of MOS and bipolar devices. The total ionizing dose effects can lead to degradation of electrical parameters such as threshold voltage shift, channel mobility degradation, and gain degradation. With the development of semiconductor devices in the direction of small size, the effects are enhanced and the reliability of semiconductor devices is decreasing. It is important to understand the total ionizing dose effects on spacecraft operational amplifier. As a basic linear circuit, operational amplifiers are widely used in space systems. In recent years, many researches have been done on the damage characteristics of operational amplifiers in different radiation environments, different temperatures and different dose rates. Many works are limited to low-speed operational amplifiers with gain bandwidth product (GBW) less than 1GHz. In practical application, the signal may have a high frequency component, which puts forward a high demand for the bandwidth of the system.