Through theoretical simulation and fabrication, the performance of optical amplification chip based on asymmetric quantum-wells（10nm and 6nm mixed quantum-wells）and symmetric quantum-wells(10nm quantum-wells) is analyzed and compared. The theoretical mode gains of the two structures are in good agreement with the measured results. The final spectral test results show that the fundamental state saturation exists in the symmetric quantum-wells optical amplification chip. The excited state transition dominates in the case of large current injection, resulting in a sharp decrease in the optical bandwidth. With the increase of injection current, spectral width of asymmetric quantum-wells optical amplification chip is widened. The optical bandwidth of 199.7nm is achieved at 600mA, covering the S and C bands. Therefore, the asymmetric quantum well structure is more conducive to the realization of high power and wide spectrum optical amplification chip.