In_0.53Ga_0.47As single photon avalanche diodes (SPADs) response wavelength of 950nm-1700nm. With the advantages of small size and high-sensitivity, In_0.53Ga_0.47As SPADs are widely used in quantum communication, laser communication and Lidar. Temperature will influence the characteristics of the detector, that the higher temperature is ,the worse dark counting will be. So the study of temperature characteristics in In_0.53Ga_0.47As SPADs can provides important way to suppress dark counting. This article built a mathematical model to extract photoelectric parameters. By analyzing the influence of charge carriers in absorber layer and multiplication layer, optimized structure parameters are obtained. Finally, 70μm diameter size detector chips are prepared, package and test. The results show that the detection efficiency reaches 14.2%, the dark counting 88.6kHz and the NEP 3.82E-16 W*Hz^_-1/2. The test results agree will with the simulation.