In order to prepare flexible transparent electrode suitable for the flexible optoelectronic device application, ZnSnO/AgNW bi-layer thin films are prepared by the processes of spin coating and magnetron sputtering.SThe morphology and phase structure of ZnSnO/AgNW bi-layer films are analyzed by X-ray diffractometer and scanning electron microscope. The electrical and optical properties of Z bi-layer films are characterized by UV-visible spectrophotometer and four-probe tester, respectively. The ZnSnO/AgNW bi-layer films display excellent electrical and optical properties. Under the optimal preparation conditions, the sheet resistance of bi-layer films is 12.3 Ω /□ at transmittance of 88.1%, while the figure of merit is as high as 231. The resistance of the ZnSnO/AgNW bi-layer films is increased by only 13% after 1000 bending cycles at a curvature radius of 5.0 mm, indicating the good flexibility.SIn addition, the electrode has excellent adhesion and oxidation resistance. The resistance is unchanged after 20 taping cycles, and retains its initial resistance after being stored in high temperature and humidity for a period of time. The ZnSnO/AgNW bi-layer transparent electrode can be used in flexible wearable electronics.