School of Science,Shenyang Ligong University
采用射频磁控溅射法在石英衬底上制备了氧化镓(Ga2O3)薄膜。利用X射线衍射仪和紫外-可见-红外分光光度计分别对Ga2O3薄膜的晶体结构和光学带隙进行了表征，并在室温下测量了Ga2O3薄膜的光致发光(PL)谱。结果表明：制备的Ga2O3薄膜呈非晶态，光学带隙变大。吸收边随着溅射气压的增加先蓝移后红移,光学带隙值范围为4.96-5.30 eV。在325 nm激光激发下，在400 nm和525 nm处出现缺陷能级相关的发光峰。
Ga2O3 thin films were grown on quartz substrate by radio-frequency magnetron sputtering. The structure and optical bandgap of Ga2O3 films were characterized by X-ray diffraction and UV-Vis-IR spectroscopy, respectively. The photoluminescence (PL) spectra of Ga2O3 films were measured at room temperature. The results show that the deposited Ga2O3 films are amorphous, the optical band gap becomes bigger. As the pressure increases, the optical absorption edge firstly shows blue shifted and then switches to red shifted. The optical bandgap value ranges from 4.96-5.30 eV. Under the excitation of 325 nm laser, luminescence peaks related to defect energy levels appear at 400 nm and 525 nm.