The thick Fe-doped GaN was prepared by the hydride vapor phase epitaxy method. Through the changes of luminescence properties with doping concentration, temperature and excitation power, the intrinsic correlation between infrared and blue emissions with the doped Fe ions is explored. The photoluminescence excitation spectra show the characteristics and process of the energy level transition of infrared and blue emission which are related with Fe ion. The infrared luminescence will be suppressed at higher doping concentrations, while the blue emission intensity will increase significantly. On the other hands, comparing to the blue emission, the infrared emission intensity increases more significant at higher dislocation density. Furthermore, the radiation recombination processes related to different states of Fe ions were analyzed, and the intrinsic defect and dislocations in GaN have an important influence on the Fe related energy level transitions.