(松山湖材料实验室, 广东 东莞 523808)
(Songshan Lake Materials Laboratory, Dongguan 523808, CHN)
As a typical representative of the third generation semiconductor materials, SiC has great application prospects in the field of power devices due to its excellent physical and chemical properties. In this paper, the basic principles of laser drilling are briefly introduced. The research progresses of long pulse and ultra-short pulse laser drilling of SiC are summarized. The processing characteristics of long pulse and ultra-short pulse laser are compared, and the drilling effects of SiC under different pulse widths are analyzed. At the same time, the research status of laser drilling of SiC power devices, such as GaN/SiC and AlGaN/GaN/SiC are introduced. Finally, the challenges of laser drilling of SiC and its power devices are pointed out, and the future development directions are prospected.