SiC及其功率器件的激光制孔研究进展
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(松山湖材料实验室, 广东 东莞 523808)

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广东省基础与应用基础研究基金项目(2020A1515111183).通信作者:王宏建


Research Progress on Laser Drilling of Silicon Carbide and Its Power Devices
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(Songshan Lake Materials Laboratory, Dongguan 523808, CHN)

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    摘要:

    SiC作为第三代半导体材料的典型代表,因具有优异的物化性能,在功率器件领域具有极大的应用前景。文章简要介绍了激光制孔的基本原理,综述了SiC的长脉冲与超短脉冲激光制孔研究进展,对比了长脉冲与超短脉冲激光的加工特点,分析了不同脉冲宽度下SiC的制孔效果。同时,介绍了GaN/SiC,AlGaN/GaN/SiC等SiC功率器件的激光制孔研究现状。最后,指出了SiC及其功率器件激光制孔面临的挑战,并展望了未来的发展方向。

    Abstract:

    As a typical representative of the third generation semiconductor materials, SiC has great application prospects in the field of power devices due to its excellent physical and chemical properties. In this paper, the basic principles of laser drilling are briefly introduced. The research progresses of long pulse and ultra-short pulse laser drilling of SiC are summarized. The processing characteristics of long pulse and ultra-short pulse laser are compared, and the drilling effects of SiC under different pulse widths are analyzed. At the same time, the research status of laser drilling of SiC power devices, such as GaN/SiC and AlGaN/GaN/SiC are introduced. Finally, the challenges of laser drilling of SiC and its power devices are pointed out, and the future development directions are prospected.

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  • 收稿日期:2021-06-01
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  • 在线发布日期: 2021-09-03
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