近红外增强硅基图像传感器研究
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1.重庆光电技术研究所;2.装备发展部驻重庆地区军事代表室

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国家重点研发计划资助(2018YFF0109600)


Study on Near Infrared-enhanced CCD Imaging Sensors
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1.Military Representative Office of Equipment Development Department in Chongqing;2.Chongqing Optoelectronics Research Institute

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    摘要:

    电荷耦合器件(CCD)图像传感器具有噪声低、动态范围大、暗电流低等特点,在海洋、深空探测、对地遥感和科学仪器等领域具有极其重要的应用。CCD图像传感器采用硅材料制作,对波长大于1000nm光子的吸收能力差,导致器件的近红外响应低,使其应用场景受到一定程度限制。黑硅从紫外光(波长250nm)到近红外光(波长2500nm)都具有高吸收率,可以增强硅基光电探测器近红外响应灵敏度。通过黑硅增强技术,本文研制了近红外增强CCD图像传感器。研究结果表明,在400nm-1040nm波长范围内,反应离子刻蚀法制备的黑硅反射率小于7%,吸收率大于93%。即使在波长1500nm以上,黑硅吸收率仍可达60%。黑硅CCD近红外响应得到增强,在波长950nm和1060nm的量子效率分别达到和41.8%和16.1%。

    Abstract:

    Charge-coupled device (CCD) imaging sensors appear very important applications in ocean, deep space exploration, remote sensing of earth, scientific instrument and other fields for their low noise, wide dynamic range and low dark current. However, near infrared responsivity of silicon-based CCD imaging sensor is low for weak light absorption in the wavelengths exceeding 1000nm, so its application scenarios are limited to a certain extent.Black silicon (BS) appears very high absorptance of light from the near- ultraviolet (250nm) to the near-infrared (2500nm) wavelength region. And the black silicon detectors are many times more responsivity than conventional silicon detectors in the near infrared. In this article,near infrared-enhanced CCD imaging sensors are fabricatedby black-silicon enhancement technology. It is indicated that, the reflectance of black silicon, prepared by reactive ion etching, is less than 7% and the absorptance of the sample remains more than 93% in the wavelength from 400nm to 1040nm.The absorptance of 60% is observed at the wavelengths longer than 1500nm.The near infrared response of CCD is remarkably enhanced by black silicon. The quantum efficiencies of these devices at the wavelength of 950nm and 1060nm are 41.8% and 16.1%.

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  • 收稿日期:2020-12-23
  • 最后修改日期:2020-12-23
  • 录用日期:2021-01-18
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