Based on the derivation of analytical formula,displacement damage test results and numerical simulation of displacement effects,the fluence dependences of threshold current,external differential quantum efficiency and I-V characteristics are analyzed in either case of defects as the non-radiative recombination centers and defects as the traps for majority carriers.The defects primarily act as non-radiative recombination centers in ordinary range of test fluence and induce the following results that the thre...