By using two-dimensional simulation software sentaurus TCAD, simulations were performed on the variable regularities of the potential of the photosensitive area for interline transfer charge coupled device(IT-CCD), and the simulation model was established. Based on simulation analysis on the charge capacity, the p-well concentration and junction depth, it is concluded that the optimal parameters of p-well concentration and depth should be controlled as 2.5×1016~5.5×1016cm-3 and 5.5~6.5μm, respectively.